New insights into fully-depleted SOI transistor response after total-dose irradiation
New insights into fully-depleted SOI transistor response after total-dose irradiation
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DOI：
10.1109/radecs.1999.858599
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发表时间：
1999-03
期刊：
影响因子：
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通讯作者：
J. Schwank;M. Shaneyfelt;P. Dodd;J. Burns;C. Keast;P. Wyatt
中科院分区：
文献类型：
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作者：
J. Schwank;M. Shaneyfelt;P. Dodd;J. Burns;C. Keast;P. Wyatt
在这项工作中，我们探索了总剂量电离辐照对全耗尽SOI晶体管的影响。用10keV X射线对两种全耗尽工艺制造的封闭几何结构和标准晶体管进行了辐照。我们的结果表明，辐射感生漏电流的增加是由反向沟道界面的掩埋氧化物中的正电荷陷阱引起的。在中等水平的俘获电荷时，后沟道界面轻微反转，导致少量泄漏电流流动。这种泄漏电流可以通过碰撞电离放大到相当高的水平。在陷阱电荷水平较高时，后沟道界面完全反转，栅极偏置对漏电流的影响很小。在沟道区发生碰撞电离或不发生碰撞电离都可以获得较大的泄漏电流增加。对于这些晶体管，对于辐射感应型晶体管响应由埋在氧化物中的电荷积累和在沟槽侧壁隔离中主导的两种情况，最坏的偏置配置被确定为“导通”偏置配置。这些结果对硬度保证具有重要意义。
In this work we explore the effects of total-dose ionizing irradiation on fully-depleted SOI transistors. Closed-geometry and standard transistors fabricated in two fully-depleted processes were irradiated with 10-keV x rays. Our results show that increases in radiation-induced leakage current are caused by positive charge trapping in the buried oxide inverting the back-channel interface. At moderate levels of trapped charge, the back-channel interface is slightly inverted causing a small leakage current to flow. This leakage current may be amplified to considerably higher levels by impact ionization. At high levels of trapped charge, the back-channel interface is fully inverted and the gate bias has little effect on leakage current. Large increases in leakage currents can be obtained with or without impact ionization occurring in the channel region. For these transistors, the worst-case bias configuration was determined to be the "ON" bias configuration for both the cases where radiation-induced transistor response was dominated by charge buildup in the buried oxide and in the trench sidewall isolation. These results have important implications on hardness assurance.