Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation
Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation
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通过选择性离子注入在应变控制的 SiGe 缓冲器上形成单轴应变 Si/Ge 通道
DOI：
10.1149/05009.0815ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
K. Sawano
中科院分区：
文献类型：
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作者：
T.Araki;D.Fukuoka;H.Tamiya;S.Harui;T.Yamaguchi;H.Miyake;K.Hiramatsu;Y.Nanishi;石井久夫;今井真美・福原学・楊成・森直・井上佳久;K. Sawano
我们在含有单轴应变的SiGe缓冲层上制作了单轴应变的SiGe沟道。为了在SiGe缓冲层中引入单轴应变，发展了一种选择性离子注入技术。在Si衬底中进行具有条带图案的横向选择性离子注入，随后在整个区域中进行SiGe过生长。SiGe的大的应变弛豫仅发生在离子注入区。这种弛豫的SiGe向未注入区域中的相邻应变SiGe提供剪切应力，导致单轴应变弛豫。单轴弛豫的量强烈依赖于条纹线的宽度，表明应变状态的高可控性。在应变控制的SiGe缓冲层上，发现具有较高Ge浓度的单轴应变SiGe沟道是赝晶生长的。这一结果表明，该技术具有很高的潜力，实现高迁移率的Si/Ge沟道与单轴应变。
We fabricate uniaxially strained SiGe channels on SiGe buffer layers containing the uniaxial strain. For introducing the uniaxial strain into SiGe buffer layers, a selective ion implantation technique is developed. Laterally selective ion implantation with a stripe pattern is performed into a Si substrate, followed by SiGe overgrowth in the whole region. Large strain relaxation of SiGe occurs only in the ion-implanted area. This relaxed SiGe provides shear stress to the neighboring strained SiGe in the unimplanted area, leading to the uniaxial strain relaxation. The amount of the uniaxial relaxation strongly depends on the stripe line width, indicating high controllability of the strain states. On the straincontrolled SiGe buffer, the uniaxially strained SiGe channel with the higher Ge concentration is found to be pseudomorphically grown. This result indicates that this technique has a high potential to realize high-mobility Si/Ge channels with uniaxial strain.