Bootstrapping the 3d Ising twist defect
Bootstrapping the 3d Ising twist defect
复制标题
DOI:
10.1007/jhep03(2014)100
复制
发表时间:
2013-10
影响因子:
5.4
通讯作者:
D. Gaiotto;D. Mazáč;M. Paulos
中科院分区:
文献类型:
--
作者:
D. Gaiotto;D. Mazáč;M. Paulos
Recent numerical results point to the existence of a conformally invariant twist defect in the critical 3d Ising model. In this note we show that this fact is supported by both epsilon expansion and conformal bootstrap calculations. We find that our results are in good agreement with the numerical data. We also make new predictions for operator dimensions and OPE coefficients from the bootstrap approach. In the process we derive universal bounds on one-dimensional conformal field theories and conformal line defects.