High‐Performance, Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages
High‐Performance, Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages
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DOI：
10.1002/adfm.200701125
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发表时间：
2008-03
影响因子：
19
通讯作者：
Weiping Wu;Yunqi Liu;Ying Wang;Hongxia Xi;Xike Gao;Chong‐an Di;G. Yu;W. Xu;Daoben Zhu
中科院分区：
文献类型：
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作者：
Weiping Wu;Yunqi Liu;Ying Wang;Hongxia Xi;Xike Gao;Chong‐an Di;G. Yu;W. Xu;Daoben Zhu
有机场效应晶体管除了其相对低的迁移率之外还遭受超高的工作电压。一种通用的方法，低工作电压的有机场效应晶体管（OFFEs）使用施主/受主缓冲层的演示。具有受体分子缓冲层的P型OFFET显示出降低的工作电压（从60-100 V到10-20 V），迁移率高达0.19 cm 2 V−1 s−1，开/关比为3 × 106。器件的亚阈值斜率从5-12 V/decade减小到1.68-3 V/decade。这种有利的性能组合意味着这种OFFERS可以在低于20 V（|VDS| ≤ 20 V，|VGS| ≤ 20 V）。这种方法也适用于n型半导体。降低的工作电压和低夹断电压有助于改善多晶薄膜的有序性、降低晶界电阻和更陡的亚阈值斜率。
Organic field‐effect transistors suffer from ultra‐high operating voltages in addition to their relative low mobility. A general approach to low‐operating‐voltage organic field‐effect transistors (OFETs) using donor/acceptor buffer layers is demonstrated. P‐type OFETs with acceptor molecule buffer layers show reduced operating voltages (from 60–100 V to 10–20 V), with mobility up to 0.19 cm2 V−1 s−1 and an on/off ratio of 3 × 106. The subthreshold slopes of the devices are greatly reduced from 5–12 V/decade to 1.68–3 V/decade. This favorable combination of properties means that such OFETs can be operated successfully at voltages below 20 V (|VDS| ≤ 20 V, |VGS| ≤ 20 V). This method also works for n‐type semiconductors. The reduced operating voltage and low pinch‐off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes.