Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
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DOI：
10.1109/23.256656
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发表时间：
1993-08
期刊：
影响因子：
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通讯作者：
B. Dierickx;D. Wouters;G. Willems;A. Alaerts;I. Debusschere;E. Simoen;J. Vlummens;H. Akimoto;C. Claeys;H. Maes;L. Hermans;E. Heijne;P. Jarron;F. Anghinolfi;Marnie L Campbell;F. Pengg;P. Aspell;L. Bosisio;E. Focardi;F. Forti;S. Kashigin;A. Mekkaoui;M. Habrard;D. Sauvage;P. Delpierre
中科院分区：
文献类型：
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作者：
B. Dierickx;D. Wouters;G. Willems;A. Alaerts;I. Debusschere;E. Simoen;J. Vlummens;H. Akimoto;C. Claeys;H. Maes;L. Hermans;E. Heijne;P. Jarron;F. Anghinolfi;Marnie L Campbell;F. Pengg;P. Aspell;L. Bosisio;E. Focardi;F. Forti;S. Kashigin;A. Mekkaoui;M. Habrard;D. Sauvage;P. Delpierre
CERN RD19合作正在寻求一种基于高电阻率衬底的绝缘体上硅(SOI)晶片的单块像素探测器的新方法。报道了SOI-MOSFET器件的制作方法和电学评价结果。高阻PIN二极管的漏电流保持在5~10nA/cm/sup~2/数量级。所采用的SOI制备工艺--SIMOX(氧离子注入分离)和ZMR(区域熔融重结晶)--产生工作的电子电路，并且似乎与制造合适质量的探测器相兼容。>；
A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm/sup 2/. The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality. >