Point defect determination by photoluminescence and capacitance–voltage characterization in GaN terahertz Gunn diode
Point defect determination by photoluminescence and capacitance–voltage characterization in GaN terahertz Gunn diode
复制标题
作者:
Li Liang(李亮);Yang Lin-An(杨林安);Zhou Xiao-Wei(周小伟);Zhang Jin-Cheng(张进成);Hao Yue(郝跃);