Disordered Electronic Systems

Disordered Electronic Systems
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DOI:
10.1063/1.881139
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发表时间:
1985-04
期刊:
The Quantum Nature of Materials
影响因子:
--
通讯作者:
B. L. Al'tshuler;P. Lee
B. L. Al'tshuler;P. Lee
中科院分区:
其他
文献类型:
--
作者:
B. L. Al'tshuler;P. Lee

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人们通常认为,像金这样的普通金属的导电性是很容易理解的。电子形成由周期性晶格调制的平面波组成的费米海。由于电子服从费米统计,只有一个狭窄的能带,其能量在费米能量的kBT范围内,有助于导电性。在室温下,这些电子被晶格振动散射,导致动量损失和非零电阻率ρ(T)。在低温下,电子-电子散射是主要的散射机制。在零温度的极限情况下,存在剩余电阻率ρ0,这是由处于费米能的电子被晶格缺陷(如杂质和空位)散射引起的。静态缺陷,破坏平移对称性的晶格是本文中考虑的无序的来源。
The electrical conductivity of an ordinary metal such as gold is usually thought to be well understood. The electrons form a Fermi sea made up of plane waves modulated by the periodic crystal lattice. Because electrons obey Fermi statistics, only a narrow band of them, with an energy within kBT of the Fermi energy, contributes to the conductivity. At room temperature these electrons are scattered by lattice vibrations, resulting in a loss of momentum and a nonzero resistivity ρ(T). At low temperatures electron‐electron scattering is the dominant scattering mechanism. In the limiting case of zero temperature there is a residual resistivity ρ0 caused by the scattering of the electrons at the Fermi energy by lattice imperfections such as impurities and vacancies. The static defects that disrupt the translational symmetry of the crystalline lattice are the source of the disorder considered in this article.