Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography
Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography
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DOI：
10.1016/j.mee.2017.04.030
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发表时间：
2017-07-05
影响因子：
2.3
通讯作者：
Peiner, Erwin
中科院分区：
文献类型：
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作者：
Hamdana, Gerry;Suedkamp, Tobias;Peiner, Erwin
报道了一种改进的纳米纤维加工技术，通过胶体光刻实现了垂直排列的硅纳米线（SiNW 5）。在基底上制备微结构图案阵列，允许选择性沉积聚苯乙烯（PS）纳米颗粒。使用PSS/PDDA/PSS-层，表面性质可以被修改，导致硅衬底的增强的亲水性，这是随后的高表面覆盖率高达~ 83%的颗粒转移后。在制造过程中，我们展示了完全控制的掩模尺寸提供良好的控制纳米结构特征尺寸的电感耦合等离子体（ICP）反应离子刻蚀（RIE）工艺在低温下。最后，这种自下而上和自上而下方法的组合方法提供了简单和直接的纳米级加工步骤，具有低成本和高再现性，使得能够在一定区域内高密度地制造纳米结构（类似于10（9）SiNW/cm（2））。这种制备路线的硅纳米线被施加到同位素控制的硅层外延生长在Si衬底上。这些硅纳米线的原子探针断层扫描显示，同位素层的有序保存的NW制造路线。(C)2017爱思唯尔B. V.保留所有权利。
An improved nanofabrication processing technique for realization of vertically aligned silicon nanowires (SiNW5) by colloidal lithography is reported in this work. Microstructure pattern arrays are prepared on the substrate allowing selective deposition of polystyrene (PS) nanoparticles. Using PSS/PDDA/PSS-layer, surface properties can be modified resulting in an enhanced hydrophilicity of the silicon substrate, which is followed by high surface coverage up to-83% after particle transfer. During the fabrication, we demonstrate full control of the mask dimension providing excellent control of nanostructure feature size by inductively coupled plasma (ICP) reactive ion etching (RIE) process at cryogenic temperature. Finally, this combined approach of bottom-up and top-down methods offers simple and direct nanoscale processing steps with low-cost and great reproducibility, enabling high density fabrication of nanostructure (similar to 10(9) SiNW/cm(2)) within certain area. This preparation route of the SiNWs was applied to isotopically controlled silicon layers grown epitaxially on Si substrates. Atom probe tomography of these SiNWs reveal that the isotope layer ordering is preserved by the NW fabrication route. (C) 2017 Elsevier B.V. All rights reserved.