SURFACE CHANGES DURING AC ETCHING OF ALUMINUM
SURFACE CHANGES DURING AC ETCHING OF ALUMINUM
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DOI:
10.1149/1.2127408
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发表时间:
1981-01-01
影响因子:
3.9
通讯作者:
ALWITT, RS
中科院分区:
文献类型:
--
作者:
DYER, CK;ALWITT, RS
Electrochemical etching of AI with alternating current produces a high density of cubic etch pits covered with a film of oxide or hydroxide. Micrographs of the metal and film structures are presented and a model is proposed to explain the observations. Calculations demonstrate the feasibility of film deposition from acid solution when a high cathodic current density is applied. A critical feature is that the high aluminum salt concentration near the metal surface hinders proton mobility.Electrochemical etching with alternating current is used to obtain a high surface area on A1 foil for electrolytic capacitor electrodes and also to obtain a roughened surface sUitable for aluminum lithographic plates. Ac etching is characterized by a uniform depth of roughened metal and by the presence of a film of oxide or hydroxide within this etched layer. This film is presumed to deposit because of the increase in local pH caused by the cathodic half-cycle (1). The tunnel structures that dominate the appearance of A1 etched with direct current in chloride solutions at high temperature (2, 3) are not seen with ac etching. Although ac etching has been used commercially for over 25 years it has not been discussed in the scientific literature except for a recent paper which presented evidence for the deposited film (1). The present work shows the appearance and development of the etch structure and accompanying film under a limited set of experimental conditions. Calculations demonstrate the feasibility of film deposition from acid solution when a high cathodic current density (CD) is applied.