Structural and multiferroic properties of Bi0.92-x Ho0.08Sr (x) Fe0.97Mn0.03O3 thin films
Structural and multiferroic properties of Bi0.92-x Ho0.08Sr (x) Fe0.97Mn0.03O3 thin films
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Bi0.92-x Ho0.08Sr (x) Fe0.97Mn0.03O3 薄膜的结构和多铁性
DOI：
10.1007/s10853-016-0560-x
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发表时间：
2017
影响因子：
4.5
通讯作者：
Xia Ao
中科院分区：
文献类型：
--
作者：
Tan Guoqiang;Yang Wei;Ye Wei;Yue Zhongwei;Ren Huijun;Xia Ao
摘要采用溶胶-凝胶法在FTO/玻璃衬底上制备了BiHoSrFeMnO(BHSrFMO)薄膜。对薄膜的结构、表面形貌和电学性质进行了研究。结果表明，掺入锶离子后，BHSrFMO薄膜的结构由三方R3C：H转变为三方R3m：R。当BHSrFMO(x=0.00-0.04)薄膜的铁电畴结构从铁电相和反铁电相转变为铁电相时，矫顽场E增大。当BHSrFMO薄膜的缺陷偶极子增加时，这种变化就会发生，从而抑制了磁区壁的运动，改变了自发极化的方向。在536kV/cm电场下，BHSrFMO薄膜的2P和2E分别为81.9μC/cm和524kV/cm。在8000Oe的磁场下，BHSrFMO薄膜的磁化强度为8.34emu/cm。BHSrFMO薄膜具有很强的多铁性，这主要与R3c：H(51%)/R3m：R(49%)空间群在准同型相界的菱面体结构有关。
Abstract The BiHoSrFeMnO (BHSrFMO) thin films were deposited on FTO/glass substrates by the sol-gel method. The structure, surface morphologies, and electric properties of the thin films were investigated. The results show that the structure of BHSrFMO thin films transformed from rhombohedral R3c: H to rhombohedral R3m: R when doped with the Sr ions. When the ferroelectric domain structure of the BHSrFMO (x= 0.00-0.04) thin films is converted from ferroelectric phase and antiferroelectric phase to ferroelectric phase, the coercive field (E) increased. This change occurs when the defect dipole ofof BHSrFMO thin films increased, which clamps the domain wall motion and changes the directions of spontaneous polarization. In an electric field of 536 kV/cm, the 2 P and 2 E of BHSrFMO thin film are 81.9 μC/cm and 524 kV/cm, respectively. In the magnetic field of 8000 Oe, the magnetization of the BHSrFMO thin film is 8.34 emu/cm. The BHSrFMO thin film shows the great multiferroic properties, which are mainly connected with the rhombohedral structure of R3c: H (51%)/R3m: R (49%) space groups at morphotropic phase boundary.