Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis
Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis
复制标题
通过透射电子显微镜和 X 射线形貌分析表征 4H-SiC 溶液生长过程中形成的 V 形缺陷
DOI：
10.1021/acs.cgd.6b00711
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Ujihara
中科院分区：
文献类型：
--
作者：
S. Xiao;S. Harada;K. Murayama;T. Ujihara
用同步辐射X射线形貌术和透射电子显微镜（TEM）研究了4 H-SiC（0001）溶液生长过程中产生的缺陷。之前未识别的缺陷在X射线形貌图像中被识别为V形对比度特征。结合TEM结果的详细分析表明，新产生的缺陷被确定为一对位错在基面上具有相反的伯格斯矢量平行于[112 <$0]方向。结果表明，V形缺陷的形成与衬底中的缺陷没有直接关系。对V形缺陷的尺寸和形状的几何分析表明，它们在生长过程中间歇地成对成核。这些缺陷配置的观察到的形态的基础上，在溶液生长过程中的二维成核的机制被假定为产生的V形缺陷。
Defects generated during 4H-SiC (0001) solution growth have been investigated by synchrotron X-ray topography and transmission electron microscopy (TEM). The defects unidentified before are recognized as V-shaped contrast features in the X-ray topographic images. The detailed analysis combining TEM results revealed that the newly generated defects are identified as a pair of dislocations on a basal plane with opposite Burgers vectors parallel to the [112̅0] direction. It is found that no defects in the substrate are directly associated with the formation of the V-shaped defects. Geometric analysis of the size and shape of the V-shaped defects indicates that they nucleate in pairs intermittently during the growth process. On the basis of the observed morphology of these defect configurations, a mechanism of two-dimensional nucleation during solution growth is postulated for the generation of the V-shaped defects.