Controlled removal of amorphous Se capping layer from a topological insulator
Controlled removal of amorphous Se capping layer from a topological insulator
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DOI：
10.1063/1.4904803
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发表时间：
2014-12-15
影响因子：
4
通讯作者：
Parkin, Stuart
中科院分区：
文献类型：
--
作者：
Virwani, Kumar;Harrison, Sara E.;Parkin, Stuart
我们报告了从 Bi2Te3 和 Bi2Se3 拓扑绝缘体中受控去除非晶 Se 覆盖层的情况。我们发现，在接近 150 摄氏度的温度下，Se 会聚结成微米大小的岛，然后从表面解吸。原位俄歇电子能谱显示，Se 取代了 Bi2Te3 顶部表面附近的很大一部分 Te。卢瑟福背散射光谱和透射电子显微镜表明，加热后，Se 已融入 Bi2Te3 晶格中，距离其顶面约 7 nm，同时保持同结构。 (C) 2014 AIP 出版有限责任公司。
We report on the controlled removal of an amorphous Se capping layer from Bi2Te3 and Bi2Se3 topological insulators. We show that the Se coalesces into micron-sized islands before desorbing from the surface at a temperature of similar to 150 degrees C. In situ Auger Electron Spectroscopy reveals that Se replaces a significant fraction of the Te near the top surface of the Bi2Te3. Rutherford Backscattering Spectrometry and Transmission Electron Microscopy show that after heating, Se has been incorporated in the Bi2Te3 lattice down to similar to 7 nm from its top surface while remaining iso-structural. (C) 2014 AIP Publishing LLC.