Lloyd’s mirror interference lithography with EUV radiation from a high-harmonic source
Lloyd’s mirror interference lithography with EUV radiation from a high-harmonic source
复制标题
使用来自高次谐波源的 EUV 辐射进行劳埃德镜干涉光刻
DOI：
10.7567/apex.9.076701
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
W. Brocklesby
中科院分区：
文献类型：
--
作者：
Hyunsu Kim;P. Baksh;M. Odstrčil;Magdalena Miszczak;J. Frey;L. Juschkin;W. Brocklesby
我们演示了使用高谐波源的干涉光刻。利用飞秒钛宝石激光(脉冲40ps，平均功率2W，频率1 kHz)，在Ar气体中产生800 nm的高次谐波辐射，产生极紫外辐射。使用ZEP-520A光刻胶记录使用劳埃德反射镜装置创建的干涉图案和27次谐波(29 Nm)的单色辐射，产生间距为200 nm的特征。研究了飞秒脉冲EUV辐射对记录图案的影响。讨论了高次波源用于高分辨率图形制作的能力。
We demonstrate interference lithography using a high-harmonic source. Extreme ultraviolet (EUV) radiation is produced by high-harmonic generation with 800 nm light from a femtosecond Ti:sapphire laser (40 fs pulses, 1 kHz, 2 W average power) in argon gas. Interference patterns created using Lloyd’s mirror setup and monochromatized radiation at the 27th harmonic (29 nm) are recorded using a ZEP-520A photoresist, producing features with <200 nm pitch. The effect of the use of femtosecond pulsed EUV radiation on the recorded pattern is investigated. The capability of the high-harmonic source for high-resolution patterning is discussed.