Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units
Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units
复制标题
使用分级生长单元的整体单层尺度特征数字合金 AlN/GaN 超晶格
DOI：
10.1021/acs.cgd.8b01677
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发表时间：
2019-03-01
影响因子：
3.8
通讯作者：
Kang, Junyong
中科院分区：
文献类型：
--
作者：
Gao, Na;Feng, Xiang;Kang, Junyong
获得具有匹配的相干晶格、原子级尖锐界面和可忽略的成分波动的AlN/GaN数字合金仍然是一个挑战。在这项工作中，AlN和GaN原子层生长的组成元素的性质和形成机制进行了第一性原理计算和实验验证。在计算出的形成周期的基础上，我们开发了一种分级生长方法，其中AlN和GaN生长单元通过金属有机气相外延逐层数字堆叠，该方法涉及瞬时生长序列以控制不同气氛下分级生长单元的化学势。高分辨率X射线衍射和透射电子显微镜证实，数字合金化AlN/GaN结构的分级GaN和AlN生长单元在原子尺度上具有相干晶格、突变界面和完整的单层。阴极射线发光特性以单发射、阴极射线发光和阴极射线发光为主。
Acquiring AlN/GaN digital alloys with matching coherent lattices, atomically sharp interfaces, and negligible compositional fluctuations remains a challenge. In this work, the nature and formation mechanism of the constituent elements of AlN and GaN atomic layers growth was examined by first-principle calculations and experimental demonstration. On the basis of the calculated formation enthalpies, we developed a hierarchical growth method wherein AlN and GaN growth units are digitally stacked layer by layer through metal organic vapor-phase epitaxy, which involves the growth sequence instantaneously to control chemical potentials of the hierarchical growth units under different atmospheres. High-resolution X-ray diffraction and transmission electron microscopy confirmed that the hierarchical GaN and AlN growth units of digital-alloyed AlN/GaN structures had coherent lattices, abrupt interfaces, and integral monolayers at the atomic scale. The cathodoluminescence properties featured with single emission, c...