Semiconductor-Nanowire-Based Superconducting Qubit
Semiconductor-Nanowire-Based Superconducting Qubit
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DOI：
10.1103/physrevlett.115.127001
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发表时间：
2015-09-14
影响因子：
8.6
通讯作者：
Marcus, C. M.
中科院分区：
文献类型：
--
作者：
Larsen, T. W.;Petersson, K. D.;Marcus, C. M.
我们引入了一种基于具有外延生长的超导体层的半导体纳米线的混合量子位。类跨蒙器件（“gatemon”）的约瑟夫森能量由静电门控制，该静电门耗尽半导体弱连接区域中的载流子。在这些第一代器件中，演示了与片上微波腔的强耦合以及通过栅极电压脉冲进行相干量子位控制，产生相当长的弛豫时间（类似于 0.8 μs）和移相时间（类似于 1 μs），比栅极操作时间高出 2 个数量级。由于量子位控制依赖于电压而不是通量，因此电阻控制线中的耗散减少了，屏蔽减少了串扰，并且无需通量控制就可以在与拓扑量子信息相关的磁场中进行操作。
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (similar to 0.8 mu s) and dephasing times (similar to 1 mu s), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.