Universal correlations between Tc and ns/m (carrier density over effective mass) in high-Tc cuprate superconductors.

Universal correlations between Tc and ns/m (carrier density over effective mass) in high-Tc cuprate superconductors.
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DOI:
10.1103/physrevlett.62.2317
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发表时间:
1989-05
影响因子:
8.6
通讯作者:
Y. Uemura;G. Luke;B. Sternlieb;J. Brewer;J. Carolan;W. Hardy;R. Kadono;J. Kempton;R. Kiefl;S. Kreitzman;P. Mulhern;T. Riseman;Williams Dl;B. Yang;S. Uchida;H. Takagi;J. Gopalakrishnan;A. Sleight;M. A. Subramanian;C. Chien;M. Cieplak;Gang Xiao;Victor Y. Lee;B. Statt;C. Stronach;W. Kossler;X. H. Yu
Y. Uemura;G. Luke;B. Sternlieb;J. Brewer;J. Carolan;W. Hardy;R. Kadono;J. Kempton;R. Kiefl;S. Kreitzman;P. Mulhern;T. Riseman;Williams Dl;B. Yang;S. Uchida;H. Takagi;J. Gopalakrishnan;A. Sleight;M. A. Subramanian;C. Chien;M. Cieplak;Gang Xiao;Victor Y. Lee;B. Statt;C. Stronach;W. Kossler;X. H. Yu
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Y. Uemura;G. Luke;B. Sternlieb;J. Brewer;J. Carolan;W. Hardy;R. Kadono;J. Kempton;R. Kiefl;S. Kreitzman;P. Mulhern;T. Riseman;Williams Dl;B. Yang;S. Uchida;H. Takagi;J. Gopalakrishnan;A. Sleight;M. A. Subramanian;C. Chien;M. Cieplak;Gang Xiao;Victor Y. Lee;B. Statt;C. Stronach;W. Kossler;X. H. Yu

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测量了16个高温超导体样品(2:1:4,1:2:3,2:2:1:2和2:2:2:3系列)的μ子自旋弛豫速率σ。这使得我们能够研究磁场穿透深度λ,从而研究超导载流子密度n/sub s/除以有效质量m/sup */(σ proportional 1/lambda/sup 2/proportionaln/sub s//m/sup */)。T/sub c/与sigma(T. -->.)之间的一个普遍线性关系0)随着载流子掺杂的增加,已经发现成比例的n/sub s//m/sup */。然而,在重掺杂样品中,随着n/sub s/m/sup */的增加,T/sub c/显示出饱和和抑制。对于具有不同CuO平面多重性的材料,这种饱和开始于不同的n/sub s//m/sup */值。
The muon-spin-relaxation rate sigma has been measured in sixteen specimens of high-T/sub c/ cuprate superconductors (the 2:1:4, 1:2:3, 2:2:1:2, and 2:2:2:3 series). This has allowed us to study the magnetic field penetration depth lambda and thus the superconducting carrier density n/sub s/ divided by the effective mass m/sup */ (sigmaproportional1/lambda/sup 2/proportionaln/sub s//m/sup */). A universal linear relation between T/sub c/ and sigma(T..-->..0)proportionaln/sub s//m/sup */ has been found with increasing carrier doping. In heavily doped samples, however, T/sub c/ shows saturation and suppression with increasing n/sub s//m/sup */. This saturation starts at different values of n/sub s//m/sup */ for materials with different multiplicities of CuO planes.