Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction
Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction
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n-ZnO/p-CuI 异质结的制备和能带排列
DOI：
10.1109/led.2012.2218274
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发表时间：
2012-12-01
影响因子：
4.9
通讯作者：
Huang, F.
中科院分区：
文献类型：
--
作者：
Ding, K.;Hu, Q. C.;Huang, F.
采用射频磁控溅射法在p型γ-CuI（111）单晶衬底上生长未掺杂的n型ZnO薄膜，制备了n-ZnO/p-CuI异质结。通过X射线衍射和扫描电子显微镜对薄膜进行了表征，结果表明薄膜为c轴择优取向的柱状结构。通过X射线光电子能谱测量ZnO/CuI界面的能带排列，得到价带偏移为1.74 eV，导带偏移为-1.37 eV，这意味着界面处的II型带排列。其电流-电压曲线具有典型的二极管状特性，预示着其在光电子学中的应用前景。
N-ZnO/P-CuI heterojunctions are fabricated by growing undoped n-type ZnO thin films on p-type gamma-CuI (111) single-crystal substrates using radio-frequency magnetron sputtering. The ZnO films are identified to be columnar structured with c-axis-preferred orientation by using X-ray diffraction and scanning electron microscope. Measurements of the energy band alignment of ZnO/CuI interface by using X-ray photoelectron spectroscopy result in a valence band offset of 1.74 eV and a conduction band offset of -1.37 eV, meaning a type-II band alignment at the interface. A typical diodelike behavior of the current-voltage curve indicates its possible applications in optoelectronics with further development.