Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111)
Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111)
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氧化高磷掺杂同质外延金刚石的场致发射机理（111）
DOI：
10.1063/1.2135875
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发表时间：
2005
影响因子：
4
通讯作者：
K. Okano
中科院分区：
文献类型：
--
作者：
T. Yamada;C. Nebel;B. Rezek;D. Takeuchi;N. Fujimori;A. Namba;Y. Nishibayashi;H. Yamaguchi;I. Saito;K. Okano
在室温下对高掺磷氧化同外延金刚石（111）进行了空间分辨电子场发射实验。金刚石层呈现跳变电导率。场发射特性有三个不同的区域。我们将发射电流的变化归因于：(a)导电带最小值的电子发射（区域I）， (b)表面导电带电子的耗尽（区域II），以及(c)磷水平的发射（区域III）。根据这些数据，我们计算了1-1.5eV氧化表面的有效正电子亲和力。
Spatially resolved electron field emission experiments on oxidized highly phosphorus-doped homoepitaxial diamond (111) were applied at room temperature. The diamond layer shows hopping conductivity. Field emission properties have three distinct regions. We attribute the variation in emission currents to: (a) Electron emission from conduction-band minimum (Region I), (b) Depletion of conduction-band electrons at the surface (Region II), and (c) emission from the phosphorus level (Region III). From these data, we calculate an effective positive electron affinity for the oxidized surface of 1–1.5eV.