Defect structure development in electron-irradiated Cu-based Si, Ge and Sn binary alloys
Defect structure development in electron-irradiated Cu-based Si, Ge and Sn binary alloys
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电子辐照铜基硅、锗和锡二元合金的缺陷结构发展
DOI：
10.1080/01418610008216493
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
M. Kiritani
中科院分区：
文献类型：
--
作者：
Y. Satoh;T. Yoshiie;I. Ishida;M. Kiritani
摘要：采用高压电子显微镜对300 K以上铜基二元合金进行了1 MeV电子辐照系统实验，研究了溶质原子对缺陷结构发展的影响。所测溶质元素为Si（+5.08%）、Ge（+27.77%）和Sn(+83.40%)，其体积尺寸因子在括号中；它们的含量分别为0.05、0.3和2 at。分别为%。在纯Cu和所有合金中均形成了间隙型位错环和层错四面体（SFTs）。在纯Cu中，环数密度的温度依赖性在373 K左右呈“下降峰”（即几乎不形成环路）；在此温度以下，大部分环在辐照过程中收缩和消失，而在此温度以上，所有环都变大；SFTs不稳定，反复形成和消失。在合金中，环数密度随温度的升高而单调降低（没有出现下降峰）；在Cu-Ge和Cu-Sn合金中，在一定温度以上除完全抑制外，环路的形成大大增强；在更高的温度下形成稳定的SFTs。提出了这些效应的机制，考虑了溶质原子对点缺陷的捕获，辐射诱导的溶质元素偏析，以及由于溶质元素偏析导致的缺陷团簇对点缺陷吸收的偏置效应。
Abstract Systematic experiments of 1 MeV electron irradiation were made on Cu-based binary alloys above 300 K using a high-voltage electron microscope in order to study the effects of solute atoms on defect structure development. The solute elements examined were Si (+5.08%), Ge (+27.77%) and Sn (+83.40%), the volume size factors of which are given in parentheses; the amounts of these were 0.05, 0.3 and 2 at.% respectively. Interstitial-type dislocation loops and stacking-fault tetrahedra (SFTs) were formed in pure Cu and all the alloys. In pure Cu, the temperature dependence of the loop number density had a ‘down peak’ (i.e. loops hardly formed) around 373 K; below this temperature the majority of the loops shrank and disappeared during irradiation, while all the loops grew larger above it; and SFTs were unstable and repeated the formation and disappearance. In the alloys, the loop number density decreased monotonically with increasing temperature (no down peak was observed); loop formation was greatly enhanced except for complete suppression above certain temperatures in Cu-Ge and Cu-Sn alloys; and stable SFTs formed up to higher temperatures. The mechanisms for these effects were proposed, taking into account the trapping of point defects by solute atoms, the radiation-induced segregation of solute elements, and the bias effect on point-defect absorption at defect clusters owing to the segregated solute elements.