Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors
Comparison of Different Phonon Transport Models for Predicting Heat Conduction in Silicon-on-Insulator Transistors
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DOI：
10.1115/1.1924571
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发表时间：
2005-07
影响因子：
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通讯作者：
S. Narumanchi;J. Murthy;C. Amon
中科院分区：
文献类型：
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作者：
S. Narumanchi;J. Murthy;C. Amon
微电子器件中的自热问题已开始成为制约器件性能的瓶颈。已发表的微电子中声子输运的模型使用灰色玻尔兹曼输运方程(BTE)，没有充分考虑声子色散或极化。在这项研究中，解决了亚微米绝缘体上硅晶体管中的热点问题。采用了基于BTE的包含全声子色散效应的模型。采用结构有限体积法求解边值问题。比较了全声子色散模型和傅立叶扩散模型的计算结果。还与以前发表的采用灰色和半灰色近似的BTE模型进行了比较。不同模型预测的最高热点温度有显著差异。与全声子色散模型的预测相比，傅立叶扩散对热点温度的预测低估了高达350%。对于全声子色散模型，纵向声学模式携带了大部分能流。说明了声子色散和偏振效应的重要性。
The problem of self-heating in microelectronic devices has begun to emerge as a bottleneck to device performance. Published models for phonon transport in microelectronics have used a gray Boltzmann transport equation (BTE) and do not account adequately for phonon dispersion or polarization. In this study, the problem of a hot spot in a submicron silicon-on-insulator transistor is addressed. A model based on the BTE incorporating full phonon dispersion effects is used. A structured finite volume approach is used to solve the BTE. The results from the full phonon dispersion model are compared to those obtained using a Fourier diffusion model. Comparisons are also made to previously published BTE models employing gray and semi-gray approximations. Significant differences are found in the maximum hot spot temperature predicted by the different models. Fourier diffusion underpredicts the hot spot temperature by as much as 350% with respect to predictions from the full phonon dispersion model. For the full phonon dispersion model, the longitudinal acoustic modes are found to carry a majority of the energy flux. The importance of accounting for phonon dispersion and polarization effects is clearly demonstrated.