Multi-ferroic La0.7Sr0.3MnO3/Pb(Zr,Ti)O3 bilayers for electrical field-induced resistance modulations
Multi-ferroic La0.7Sr0.3MnO3/Pb(Zr,Ti)O3 bilayers for electrical field-induced resistance modulations
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DOI：
10.1016/j.sna.2005.11.039
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发表时间：
2006-05
影响因子：
4.6
通讯作者：
C. Thiele;K. Dörr;W. Lin;K. Müller;L. Schultz
中科院分区：
文献类型：
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作者：
C. Thiele;K. Dörr;W. Lin;K. Müller;L. Schultz
采用偏轴脉冲激光沉积(PLD)方法在SrTiO_3(100)衬底上生长了La0.7Sr0.3MnO_3/PbZr0.52Ti0.48O_3异质外延双层膜。铁磁薄膜和铁电薄膜都具有很高的结构和功能(磁性、铁电)质量。一种类场效应晶体管的器件结构被用来研究同样表现出巨磁电阻(CMR)的锰氧化物的电场诱导电阻调制。众所周知，这种器件在300K时对掺杂水平较低(10-20%)的超薄锰氧化物显示出高达20%的电场效应。在300K，d=8-200 nm厚度的La0.7Sr0.3MnO_3沟道层的电阻调制较小，当d=8 nm时，最大值为0.2%。结合La0.7Sr0.3MnO_3的相图对实验结果进行了讨论。
Heteroepitaxial bilayers of La0.7Sr0.3MnO3/PbZr0.52Ti0.48O3on SrTiO3(100) have been grown by off-axis pulsed laser deposition (PLD). Both the ferromagnetic and the ferroelectric films are of high structural and functional (magnetic, ferroelectric) quality. A field effect transistor like device structure has been utilized for the investigation of electrical field-induced resistance modulations of the manganite also showing colossal magnetoresistance (CMR). Such devices are known to show an electrical field effect of up to 20% at 300K in ultrathin layers of manganites with lower doping level (10–20%). The resistance modulation of the La0.7Sr0.3MnO3channel layers of d=8–200nm thickness is small at 300K, with maximum value of 0.2% for d=8nm. The results are discussed with respect to the phase diagram of La0.7Sr0.3MnO3.