Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
复制标题
原子探针断层扫描研究沟槽型三维金属氧化物半导体场效应晶体管多晶硅栅极中磷和硼的扩散路径
DOI：
10.1063/1.4926970
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and A. Nishida
中科院分区：
文献类型：
--
作者：
B. Han;H. Takamizawa;Y. Shimizu;K. Inoue;Y. Nagai;F. Yano;Y. Kunimune;M. Inoue;and A. Nishida
