Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs
Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs
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DOI：
10.1109/tns.2008.2006841
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发表时间：
2008-12-01
影响因子：
1.8
通讯作者：
Berberian, Robert
中科院分区：
文献类型：
--
作者：
Liu, Sandra;Titus, Jeffery L.;Berberian, Robert
This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs' SEB susceptibilities, describes how to correctly identify SEB and SEGR failure modes to derive the most feasible failure mechanisms.
