Annealing effect on the property of ultraviolet and green emissions of ZnO thin films
Annealing effect on the property of ultraviolet and green emissions of ZnO thin films
复制标题
DOI：
10.1063/1.1633343
复制
发表时间：
2004-02-01
影响因子：
3.2
通讯作者：
Lee, SY
中科院分区：
文献类型：
--
作者：
Kang, HS;Kang, JS;Lee, SY
采用脉冲激光沉积法在（001）蓝宝石衬底上制备了ZnO薄膜，并在不同退火温度下对薄膜进行退火处理，研究了ZnO薄膜的紫外（UV）和绿色发射机理。ZnO薄膜的结构，电学和光学性质也已观察到。随着退火温度的升高，薄膜的紫外（380 nm）峰强度和载流子浓度降低，而可见光（490-530 nm）峰强度和电阻率升高。氧在退火过程中的作用对ZnO薄膜光学性质的变化有重要影响。发光机理表明，ZnO薄膜的紫外发光与近带边到价带的跃迁有关，而绿色发光则是由于氧空位引起的深施主能级到价带的跃迁。通过使用绿色发射强度的变化导出的活化能为1.19 eV。(C)2004年，美国物理学会。
The mechanism of ultraviolet (UV) and green emission of ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition was investigated by using postannealing treatment at various annealing temperatures after deposition. Structural, electrical, and optical properties of ZnO films have been also observed. As the postannealing temperature increased, the intensity of UV (380 nm) peak and the carrier concentration were decreased while the intensity of the visible (about 490-530 nm) peak and the resistivity were increased. The role of oxygen in ZnO thin film during the annealing process was important to the change of optical properties. The mechanism of the luminescence suggested that UV luminescence of ZnO thin film was related to the transition from near band edge to valence band, and green luminescence of ZnO thin film was caused by the transition from deep donor level to valence band due to oxygen vacancies. The activation energy derived by using the variation of green emission intensity was 1.19 eV. (C) 2004 American Institute of Physics.