Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films
Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films
复制标题
非极性a面GaN薄膜MOCVD生长中V/III比对物质扩散各向异性的影响
DOI：
10.1088/1674-1056/19/1/018101
复制
发表时间：
2010
影响因子：
1.7
通讯作者：
Wu Jie-Jun
中科院分区：
文献类型：
--
作者：
Zhao Lu-Bing;Yu Tongjun;Zhijian Yang;Guoyi Zhang;Tao Dai;Wu Jie-Jun
采用金属有机化学气相沉积法在r面（11 <$02）蓝宝石衬底上生长了非极性a面（112 <$0）GaN薄膜。采用扫描电子显微镜（SEM）研究了V/III比对a面GaN薄膜中组分扩散各向异性的影响
Non-polar a-plane (112̄0) GaN films have been grown on r-plane (11̄02) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning el