Silicon detectors with 3-D electrode arrays: Fabrication and initial test results
Silicon detectors with 3-D electrode arrays: Fabrication and initial test results
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DOI：
10.1109/23.785737
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发表时间：
1999-08-01
影响因子：
1.8
通讯作者：
Storment, C
中科院分区：
文献类型：
--
作者：
Kenney, C;Parker, S;Storment, C
第一个三维探测器的n和p电极穿透硅衬底已经制造。一些预期的性能，包括低耗尽电压，宽电压平台前漏电流的限制，达到和快速收集电荷是re，即红色。包括制作步骤和泄漏电流和红外信号检测的初步测试结果。最后，作者描述了目前的工作，包括主动边缘探测器的制造，这些探测器的敏感区域应该延伸到它们的物理边缘。
The first three-dimensional detectors with n and p electrodes that penetrate through the silicon substrate have been fabricated. Some expected properties, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are re,ie,red. Fabrication steps and initial test results for leakage currents and infrared signal detection are covered. The authors conclude with a description of current work, including fabrication of active-edge detectors, ones with sensitive areas that should extend to their physical edge.