Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors
Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors
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极化诱导输运：铁电和非铁电介质栅有机场效应晶体管的比较研究
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
S. Guha
中科院分区：
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作者：
A. Laudari;S. Gangopadhyay;S. Guha
为了了解铁电栅和非铁电栅有机场效应晶体管（FET）结构中载流子输运的基本情况，采用小分子半导体6，13-二（三异丙基硅基乙炔基）并五苯（TIPS-pentacene）对FET进行了比较研究.非铁电介质栅FET的温度依赖性电流-电压特性显示出明显的激活输运，与介电常数无关。当使用铁电介电聚合物聚（偏氟乙烯-三氟乙烯）（PVDF-TrFE）时，其中介电常数可以通过改变温度来调谐，在超过200 K时观察到载流子迁移率的负温度系数。铁电电介质固有的极化波动主导输运与TIPS-并五苯中陷阱的离散性质结合导致浅陷阱态有效地脱陷为更移动的态。
A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.