Passive Near-Field Microscopy in Long-Wavelength Infrared

Passive Near-Field Microscopy in Long-Wavelength Infrared
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DOI:
10.1380/ejssnt.2011.173
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发表时间:
2011-04
影响因子:
0.7
通讯作者:
Y. Kajihara;K. Kosaka;S. Komiyama
Y. Kajihara;K. Kosaka;S. Komiyama
中科院分区:
--
文献类型:
--
作者:
Y. Kajihara;K. Kosaka;S. Komiyama

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We have demonstrated ultrasensitive near-field microscopy in the long-wavelength infrared region without any external illumination. A scattering-type scanning near-field optical microscope was developed with a highly sensitive detector (charge sensitive infrared phototransistor: wavelength λ ∼ 14.5 μm) and a thermal evanescent wave was passively obtained from room-temperature objects by vertically modulating a tungsten probe. The spatial resolution of the near-field microscope was estimated to be better than 100 nm (λ/100). The experimental results suggest that thermally excited surface plasmons on Au and surface phonons on SiC could be observed with our microscope. [DOI: 10.1380/ejssnt.2011.173]