An Electrically Controlled WavelengthTunable Nanoribbon Laser
An Electrically Controlled WavelengthTunable Nanoribbon Laser
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DOI：
10.1021/acsnano.9b09301
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发表时间：
2020
期刊：
影响因子：
17.1
通讯作者：
Anlian Pan
中科院分区：
文献类型：
--
作者：
Xin Yang;Zhengping Shan;Ziyu Luo;Xuelu Hu;Huawei Liu;Qingbo Liu;Yushuang Zhang;Xuehong Zhang;Muhammad Shoaib;Junyu Qu;Xiao Yi;Xiao Wang;Xiaoli Zhu;Yuan Liu;Lei Liao;Xingjun Wang;Shula Chen;Anlian Pan
Nanoscale laser sources with downscaled device.footprint, high energy efficiency, and high operation speed are.pivotal for a wide array of optoelectronic and nanophotonic.applications ranging from on-chip interconnects, nanospectroscopy, and sensing to optical communication. The capability of.on-demand lasing output with reversible and continuous.wavelength tunability over a broad spectral range enables key.functionalities in wavelength-division multiplexing and finely.controlled light−matter interaction, which remains an important subject under intense research. In this study, we.demonstrate an electrically controlled wavelength-tunable.laser based on a CdS nanoribbon (NR) structure. Typical “S”-.shaped characteristics of pump power dependence were.observed for dominant lasing lines, with concomitant line width narrowing. By applying an increased bias voltage across.the NR device, the lasing resonance exhibits a continuous tuning from 510 to 520 nm for a bias field in the range 0−15.4 kV/.cm. Systematic bias-dependent absorption and time-resolved photoluminescence (PL) measurements were performed,.revealing a red-shifted band edge of gain medium and prolonged PL lifetime with increased electric field over the device. Both.current-induced thermal reduction of the band gap and the Franz−Keldysh effect were identified to account for the.modification of the lasing profile, with the former factor playing the leading role. Furthermore, dynamical switching of NR.lasing was successfully demonstrated, yielding a modulation ratio up to ∼21 dB. The electrically tuned wavelength-reversible.CdS NR laser in this work, therefore, presents an important step toward color-selective coherent emitters for future chip-based.nanophotonic and optoelectronic circuitry.
