Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories
Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories
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电阻式随机存取存储器理想堆栈结构的理论设计
DOI：
10.1149/05807.0181ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and Kenji Shiraishi
中科院分区：
文献类型：
--
作者：
Katsumasa Kamiya;Moon Young Yang;Blanka Magyari-Kope;Masaaki Niwa;Yoshio Nishi;and Kenji Shiraishi
我们使用从头建模来展示电子在基于二元氧化物的电阻式随机存取存储器的空位丝状开关中的作用。我们表明，电荷注入和去除决定了灯丝的热力学稳定性和器件中的扩散。因此，电荷注入和去除时的空位凝聚-隔离相变是控制电阻开关的主要因素之一。基于物理学，我们提出了理想的三层堆叠结构，以进一步改善存储特性，其中器件单元中氧化学势的空间差异导致不对称的空位丝形状，可用于改善存储特性，例如开/关比。
We show the electronic roles in vacancy-filamentary-type switching of binary oxide-based resistive random access memories using ab initio modeling. We show that charge injection and removal determine the thermodynamic stability of the filament and the diffusion in the devices. The vacancy cohesion-isolation phase transition upon charge injection and removal is thus one of the main factors that govern resistive switching. Based on the physics, we propose desirable three-layer stack structures for further improvement of the memory characteristics, where spatial differences in the oxygen chemical potential in the device cell lead to an asymmetrical vacancy filament shape that can be used to improve the memory characteristics, such as ON/OFF ratio.