Low-voltage Zn0.97Zr0.03O thin-film transistors incorporating high-k (Ba,Sr)TiO3 gate insulators deposited on BaRuO3(110) gate electrodes
Low-voltage Zn0.97Zr0.03O thin-film transistors incorporating high-k (Ba,Sr)TiO3 gate insulators deposited on BaRuO3(110) gate electrodes
复制标题
低压 Zn0.97Zr0.03O 薄膜晶体管，采用沉积在 BaRuO3(110) 栅电极上的高 k (Ba,Sr)TiO3 栅绝缘体
DOI：
10.1149/1.2217133
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发表时间：
2006
影响因子：
--
通讯作者：
C. Lee
中科院分区：
文献类型：
--
作者：
Jen;P. Lin;J. Ho;C. Lee
研究了在BaRuO 3（110）栅电极上采用（Ba，Sr）TiO 3（BST）栅绝缘层制备的Zn0.97Zr0.03O薄膜晶体管（TFT）的低电压特性。在BaRuO 3电极上合成的优先（110）取向BST中观察到介电常数增强和漏电流抑制。与SiO2相比，BST栅绝缘层具有更高的电容，工作电压降低了10 V。在Zn 0.97Zr0.0 3 O-TFT中，BST栅绝缘层的上级界面陷阱密度（Dit）也带来了改善的电学特性，如迁移率（μ sat）、阈值电压（Vth）和亚阈值斜率（S）为1.40 cm 2 /Vs，1.45 V和0.61 V/dec。
Low voltage of sol-gel-derived Zn 0.97 Zr 0.03 O thin-film transistors (TFTs) using (Ba,Sr)TiO 3 (BST) gate insulators on BaRuO 3 (110), gate electrodes was investigated. Enhanced dielectric constants and suppressed leakage currents were observed in preferentially (110)-oriented BST synthesized on BaRuO 3 electrodes. Compared to SiO 2 , BST gate dielectrics exhibited higher capacitance that led to a reduced operation voltage of 10 V. The superior interface trap density (D it ) of BST gate insulators in Zn 0.97 Zr 0.03 O-TFTs also brought about improved electrical characteristics such as mobility (μ sat ), threshold voltage (V th ), and subthreshold slope (S) of 1.40 cm 2 /V s, 1.45 V, and 0.61 V/dec, respectively.
影响因子：
3.2
作者：
Hossain, FM;Nishii, J;Kawasaki, M
通讯作者：
Kawasaki, M