High-Q terahertz microcavities in silicon photonic crystal slabs
High-Q terahertz microcavities in silicon photonic crystal slabs
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DOI：
10.1063/1.3118579
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发表时间：
2009-04
影响因子：
4
通讯作者：
C. Yee;M. Sherwin
中科院分区：
文献类型：
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作者：
C. Yee;M. Sherwin
在硅板的三角形孔晶格中，制备了沿主轴缺失三个孔的光子晶体腔。每个空腔都被内置到一个波导中，形成一个洛伦兹滤波器。在44 μm厚的高阻硅片上构造了晶格常数为a=80和76 μm，半径r=0.30a的两个样品。透射实验表明，每个样品在1thz附近有一个单一的尖锐共振，质量因子Q高达1020。腔波导耦合、辐射损耗和材料损耗对测量Q的贡献是确定的。
Photonic crystal cavities consisting of three holes missing along a principal axis in a triangular lattice of holes in a silicon slab were fabricated. Each cavity was built into a waveguide to form a Lorentzian filter. Two samples were constructed with lattice constants a=80 and 76 μm, with a radius r=0.30a in a 44 μm thick high-resistivity silicon wafer. Transmission experiment show a single sharp resonance near 1 THz in each sample with quality factor Q as high as 1020. Contributions to the measured Q from cavity-waveguide coupling, radiative loss, and material loss are determined.