Electrically driven quantum dot single-photon source at 2 GHz excitation repetition rate with ultra-low emission time jitter
Electrically driven quantum dot single-photon source at 2 GHz excitation repetition rate with ultra-low emission time jitter
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DOI：
10.1063/1.4774392
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发表时间：
2013-01
影响因子：
4
通讯作者：
F. Hargart;C. Kessler;T. Schwarzbäck;E. Koroknay;S. Weidenfeld;M. Jetter;P. Michler
中科院分区：
文献类型：
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作者：
F. Hargart;C. Kessler;T. Schwarzbäck;E. Koroknay;S. Weidenfeld;M. Jetter;P. Michler
研究了偏置电压对InP/GaInP量子点红光单光子源发射特性的影响。在脉冲电激励下，我们可以通过施加偏压来影响p-i-n二极管的能带弯曲，从而通过量子隧穿来影响电荷载流子的逃逸。这导致对非辐射衰变通道的控制，并允许载流子逃逸时间低至40 ps，有效地降低了光子发射的时间抖动。我们实现了高达2 GHz的高激发重复率，而g（2）（0）-值为0.27的自相关测量证明占主导地位的单光子发射。
The influence of the bias voltage on emission properties of a red emitting InP/GaInP quantum dot based single-photon source was investigated. Under pulsed electrical excitation, we can influence the band bending of the p-i-n diode with the applied bias voltage and thus the charge carrier escape by quantum tunneling. This leads to control over the non-radiative decay channel and allows carrier escape times as low as 40 ps, effectively reducing the time jitter of the photon emission. We realized high excitation repetition rates of up to 2 GHz while autocorrelation measurements with g(2)(0)-values of 0.27 attest dominant single-photon emission.