Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields
Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields
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DOI：
10.1080/10408439408244588
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发表时间：
1994
影响因子：
10.8
通讯作者：
J. Malherbe
中科院分区：
文献类型：
--
作者：
J. Malherbe
摘要固体表面在高能离子轰击下会发生几种现象。本文对化合物半导体表面离子-固体相互作用作了简要的综述。深入讨论了半导体组件的溅射总产量。对于本文的讨论，假设GaAs是原型化合物半导体，因为大多数实验测量都是针对GaAs的。为了排除溅射产率中的任何化学效应，仅将氩离子轰击GaAs的总溅射产率数据与主要溅射理论的预测进行比较，特别注意线性级联溅射的Sigmund理论。提出了该理论中每个参数的不同建议，并与GaAs数据进行了比较。这些参数是表面结合能、核阻止本领和因子α，因子α代表可用于溅射的能量分数。使用不同的参数会导致…
Abstract Several phenomena occur on the surface of a solid when being bombarded by energetic ions. A short general review is given of the major ion-solid interactions on compound semiconductor surfaces. An in-depth discussion is presented of the total sputtering yields of component semiconductors. For this discussion, GaAs is assumed to be the prototype compound semiconductor because most experimental measurements exist for GaAs. To exclude any chemical effects in the sputter yields, only the total sputtering yield data for argon ion bombardment of GaAs are compared with the predictions of the major sputtering theories, with particular attention to the Sigmund theory for linear cascade sputtering. Different proposals of each of the parameters in this theory are presented and compared with the GaAs data. These parameters are the surface binding energy, the nuclear stopping power, and the factor α, which represents the fraction of energy available for sputtering. Use of the different parameters results in a...