Correction to Nanoscale Modulation of Friction and Triboelectrification via Surface Nanotexturing
Correction to Nanoscale Modulation of Friction and Triboelectrification via Surface Nanotexturing
复制标题
通过表面纳米纹理修正摩擦和摩擦起电的纳米级调节
DOI：
10.1021/acs.nanolett.9b01342
复制
发表时间：
2019
期刊：
影响因子：
10.8
通讯作者：
Kim, Jaeyoun
中科院分区：
文献类型：
--
作者：
Li, Qiang;Cho, In Ho;Biswas, Rana;Kim, Jaeyoun
弹性体表面的纳米级接触起电（CE）以及由此产生的摩擦电荷的形成在纳米技术的许多分支中都很重要，但其机制尚未完全阐明。在这封信中，我们利用最近发现的复制成型诱导的纳米级 CE 现象来研究其机制。通过生成与界面纳米纹理密切相关的摩擦电荷分布，这种现象为研究提供了明确的目标。通过将各种扫描探针显微镜技术（AFM/KPFM/EFM）和有限元建模（FEM）应用于摩擦电荷分布，我们提取了一个过程模型，可以解释它们的图案是如何形成的以及如何受到界面纳米纹理形态的影响。事实证明，界面分离过程中弹性体切向滑动的累积距离对于塑造摩擦电荷的分布模式起着关键作用。事实证明，该模型非常通用，对一直到 10 纳米以下范围内的纳米纹理都保持有效。这种复制模制诱导的CE也被证明是一种有效的工具，可以将纳米级摩擦电荷分布雕刻成非传统形式，例如环、偏食和哑铃。该模型和技术都将在纳米技术的许多领域发挥作用。
Nanoscale contact electrification (CE) of elastomer surfaces and the resulting tribocharge formation are important in many branches of nanotechnology but their mechanism is not fully clarified. In this Letter, we investigate the mechanism using the recently discovered phenomenon of replica molding-induced nanoscale CE. By generating tribocharge distributions patterned in close correlation with the interfacial nanotextures, the phenomenon provides well-defined targets for the investigation. By applying a variety of scanning probe microscopy techniques (AFM/KPFM/EFM) and finite element modeling (FEM) to the tribocharge distributions, we extract a process model that can explain how their patterns are formed and affected by the interfacial nanotexture’s morphology. It turns out that the cumulative distance of the elastomer’s tangential sliding during the interfacial separation plays the key role in shaping the tribocharge’s distribution pattern. The model proves remarkably universal, staying valid to nanotextures all the way down in the sub-10 nm regime. This replica molding-induced CE also turns out to be an effective tool for sculpting nanoscale tribocharge distributions into unconventional forms, such as rings, partial eclipses, and dumbbells. Both the model and the technique will prove useful in many areas of nanotechnology.