Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0001)
Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0001)
复制标题
DOI：
10.1016/j.apsusc.2004.09.157
复制
发表时间：
2005-05
影响因子：
6.7
通讯作者：
Gang Xu;P. Jin;M. Tazawa;K. Yoshimura
中科院分区：
文献类型：
--
作者：
Gang Xu;P. Jin;M. Tazawa;K. Yoshimura
采用射频反应磁控溅射法在α-Al 2 O3（0001）衬底上外延生长了VO 2薄膜。研究了薄膜厚度在3 ~ 150 nm范围内对薄膜光学性能的影响。结果表明，随着薄膜厚度的减小，半导体-金属相变温度显著降低，特别是对于厚度小于10 nm的薄膜。另一方面，我们发现VO 2的两个阶段之间的可见光透射率的差异也随膜厚而变化。对于厚度小于50 nm的薄膜，半导体相的可见光透过率低于金属相，而对于厚度大于50 nm的薄膜，情况正好相反。
Vanadium dioxide (VO2) films were epitaxially grown on α-Al2O3(0001) by rf reactive magnetron sputtering. The effects of film thickness ranging from 3 to 150nm on optical properties were investigated. It revealed that the semiconductor–-metal phase transition temperature considerably decreases as film thickness decreases, in particular for the film with thickness less than 10nm. On the other hand, we found that the difference in visible transmittance between the two phases of VO2also varies with film thickness. For the films with thickness less than 50nm, the semiconductor phase exhibits lower visible transmittance than its metallic phase, while for those with thickness larger than 50nm the situation is reversed.