Oxidation Behaviors of Poly(3‐hexylthiophene‐2,5‐diyl) on Indium Tin Oxide Surfaces without and with Additional TiO2 Thin Films#
Oxidation Behaviors of Poly(3‐hexylthiophene‐2,5‐diyl) on Indium Tin Oxide Surfaces without and with Additional TiO2 Thin Films#
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聚（3-己基噻吩-2,5-二基）在没有和有附加 TiO2 薄膜的氧化铟锡表面上的氧化行为
DOI：
10.1002/bkcs.10148
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发表时间：
2015
影响因子：
1.7
通讯作者：
Y. D. Kim
中科院分区：
文献类型：
--
作者：
D. Kim;Y. D. Kim
Poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) layers spin‐coated on bare and TiO2
‐coated indium tin oxide (ITO) surfaces with two different TiO2
film thicknesses were exposed to visible light and humid atmosphere, and the oxidation behaviors these layers were studied using X‐ray photoelectron spectroscopy. S atoms in P3HT were oxidized to sulfoxide without ring opening of P3HT under our experimental conditions. When the mean thickness of TiO2
on ITO was ~19 nm, oxidation of the S atoms on this substrate was more pronounced than on bare ITO and ITO covered with thinner TiO2
films (mean thickness: ~7 nm). Studies using photoluminescence (PL) suggest that electron–hole pairs created in P3HT on bare ITO can be transferred into the ITO and most likely recombine efficiently in ITO by electron–electron scattering. Relatively thin TiO2
films on ITO do not show much change in PL with respect to the case of bare ITO; however, when a thicker TiO2
film is deposited between ITO and P3HT, charge transfer from optically excited P3HT to ITO seems to be suppressed. Therefore, the probability for charge transfer from optically excited P3HT to O2
and H2O, forming strong oxidizing agents such as and OH radicals, can be increased in the presence of a thicker TiO2
film on ITO.
