Infrared photoreflectance investigation of resonant levels and band edge structure in InSb.
Infrared photoreflectance investigation of resonant levels and band edge structure in InSb.
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DOI：
10.1364/ol.40.005295
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发表时间：
2015-11
期刊：
影响因子：
3.6
通讯作者：
Xiren Chen;Jinwook Jung;Zhen Qi;Liangqing Zhu;Sehun Park;Liang Zhu;E. Yoon;J. Shao
中科院分区：
文献类型：
--
作者：
Xiren Chen;Jinwook Jung;Zhen Qi;Liangqing Zhu;Sehun Park;Liang Zhu;E. Yoon;J. Shao
Temperature-dependent infrared photoreflectance (PR) is employed on InSb for clarifying resonant levels (RLs) and band edge structure. Abundant PR features are well resolved around the bandgap and are verified to be of electronic inter-level transitions rather than the Franz-Keldysh oscillations. The evolution of the critical energies with temperature reveals the nature of the PR processes, from which one acceptor RL, two donor RLs, and a shallow acceptor level are quantitatively identified, and a detailed band edge structure is derived. The results show that temperature-dependent infrared PR analysis can serve as an efficient vehicle for clarifying both bound and resonant levels in semiconductors.
