Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing
Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing
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DOI：
10.1016/j.jpcs.2008.04.041
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发表时间：
2008-10
影响因子：
4
通讯作者：
B. Ha;Heon Ham;Cheol Jin Lee
中科院分区：
文献类型：
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作者：
B. Ha;Heon Ham;Cheol Jin Lee
在无催化剂的条件下，采用简单的热气相法在Si衬底上合成了高纯ZnO纳米线。研究了样品在900°C氧气和氩气气氛下退火后的光致发光（PL）谱。与原生ZnO纳米线相比，经O2或Ar退火后，由于退火过程中氧气离子或氧化合物扩散到氧空位中，导致与本征缺陷（氧空位）相关的PL可见光发射强度大大降低。由于氧空位的减少，O2或Ar退火的ZnO纳米线的蓝带峰也小于可见宽带中的绿带峰。因此，氧气或氩气退火可以减少ZnO纳米线的主要本征缺陷（氧空位），这是开发先进的ZnO纳米线光电器件的重要步骤。
High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600°C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900°C under oxygen and argon gases have been investigated. After O2or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.