Electronic structure of the negatively charged silicon-vacancy center in diamond
Electronic structure of the negatively charged silicon-vacancy center in diamond
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DOI：
10.1103/physrevb.89.235101
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发表时间：
2014-06-02
影响因子：
3.7
通讯作者：
Jelezko, Fedor
中科院分区：
文献类型：
--
作者：
Rogers, Lachlan J.;Jahnke, Kay D.;Jelezko, Fedor
金刚石中带负电荷的硅空位（SiV-）中心是量子通信和信息处理的一种很有前途的单光子源。然而，该中心在这种量子技术中的实现受到围绕其基本性质的争论的阻碍。在这里，我们提出了光学偏振测量散装金刚石中的单中心，解决这种状态的争论，并建立该中心具有< 111 >对齐的分裂空位结构与D-3D对称性。此外，我们确定了一个额外的电子水平和存在的动态Jahn-Teller效应在中心的738 nm的光学共振的证据。
The negatively charged silicon-vacancy (SiV-) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a < 111 > aligned split-vacancy structure with D-3d symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.