Superconducting spin valves controlled by spiral re-orientation in MnSi
Superconducting spin valves controlled by spiral re-orientation in MnSi
复制标题
MnSi 中螺旋重新定向控制的超导自旋阀
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
L. Claudine
中科院分区：
文献类型：
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作者：
P. Nataliya;S. Mikhail;Champel Thierry;Zhitomirski Mike;L. Erkki;E. Matthias;L. Claudine
我们提出了一种新型的超导自旋三重态阀。这种自旋阀由双层组成，双层包括超导体和巡回磁性材料，磁体显示出内在的非共线磁序，其特征在于波矢量Q可以在弱外部磁场的控制下在几个等效的优选方向上对齐。重新定向Q的方向允许人们可控地修改磁性材料中的长程自旋三重态超导关联，从而导致自旋阀切换行为。这种新型的超导自旋阀可作为低温纳米电子学的磁存储元件。与先前提出的超导自旋阀相比，它具有以下优点：（i）它只包含一个磁性层，这可以更容易地制造和控制;（ii）它的基态被势垒分开，这解决了这种存储元件的寻址开关的“半选择”问题。
We propose a superconducting spin-triplet valve of a new type. This spin valve consists of a bilayer that involves a superconductor and an itinerant magnetic material, with the magnet showing an intrinsic non-collinear magnetic order characterized by a wave vector Q that may be aligned in a few equivalent preferred directions under control of a weak external magnetic field. Re-orienting the direction of Q allows one to controllably modify long-range spin-triplet superconducting correlations in the magnetic material, leading to spin-valve switching behavior. This new type of superconducting spin valve may be used as a magnetic memory element for cryogenic nanoelectronics. It has the following advantages in comparison with superconducting spin valves proposed earlier: (i) it contains only one magnetic layer, which may be more easily fabricated and controlled; (ii) its ground states are separated by a potential barrier, which solves the “half-select” problem of the addressed switch of such memory elements.