Microstructural, optical and electrical studies on sol gel derived ZnO and ZnO:Al films
Microstructural, optical and electrical studies on sol gel derived ZnO and ZnO:Al films
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DOI：
10.1016/j.cap.2011.12.017
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发表时间：
2012-05-01
影响因子：
2.4
通讯作者：
Ilican, Saliha
中科院分区：
文献类型：
--
作者：
Caglar, Yasemin;Caglar, Mujdat;Ilican, Saliha
采用溶胶-凝胶法和旋涂技术在玻璃衬底上制备了ZnO和ZnO：Al薄膜。通过X射线衍射（XRD）研究了Al掺杂对ZnO薄膜晶体结构和取向的影响。利用场发射扫描电子显微镜（FESEM）和原子力显微镜（AFM）对薄膜的表面形貌进行了分析。所有薄膜在可见光区的平均透光率均大于83%。测定了薄膜的光学带隙和Urbach能值。吸收边移到较低的能量取决于Al掺杂水平。吸收边的移动与收缩效应有关。ZnO薄膜的电导率随着Al掺杂的增加而增加。从电导率测量的温度依赖性，还计算了膜的活化能。(C)2011爱思唯尔有限公司版权所有。
ZnO and ZnO:Al films were deposited onto glass substrates by the sol gel method using spin coating technique. The effects of aluminum dopant on the crystalline structure and orientation of the ZnO films have been investigated by X-ray diffraction (XRD) study. Surface morphology of the films has also been analyzed by a field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The average optical transmittance values of all the films is over >83% in the visible region. The optical band gap and Urbach energy values of these films were determined. The absorption edge shifted to the lower energy depending on the Al doping level. The shift of absorption edge is associated with shrinkage effect. The electrical conductivity of the ZnO film enhanced with the Al dopant. From the temperature dependence of conductivity measurements, the activation energy of the films was also calculated. (C) 2011 Elsevier B.V. All rights reserved.