Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters
Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters
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DOI：
10.1063/1.4906036
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发表时间：
2015-01
影响因子：
4
通讯作者：
M. Fischer;M. T. Elm;Shinya Sakita;S. Hara;P. Klar
中科院分区：
文献类型：
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作者：
M. Fischer;M. T. Elm;Shinya Sakita;S. Hara;P. Klar
我们报告的MnAs纳米簇的安排由两个细长的单畴簇连接的金属间隔的磁输运测量。该装置通过选择区域金属有机气相外延生长在GaAs（111）B衬底上。用扫描电子显微镜和原子力显微镜研究了其结构特性，用磁力显微镜分析了其磁畴结构。在120 K的磁电阻的安排进行了研究，两个测量几何形状的磁场取向在样品平面。对于这两种几何形状，观察到的MnAs纳米团簇排列的磁阻离散跳跃。这些跳跃可以解释由磁场引起的切换的相对取向的磁化的两个集群之间的界面区域中的影响自旋相关的散射集群。对于平行于纳米团簇的伸长方向的磁场取向，观察到类似自旋阀的行为，表明铁磁纳米团簇可能是用于平面磁电子器件的合适的构建块。
We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.