A Floating Gate MOSFET Based Current Reference with Subtraction Technique
A Floating Gate MOSFET Based Current Reference with Subtraction Technique
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基于浮栅 MOSFET 的减法电流基准
DOI：
10.1109/isvlsi.2010.52
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Baiju
中科院分区：
文献类型：
--
作者：
V. Babu;P. Haseena;M. Baiju
在本文中，我们提出了一个方案，用于产生一个参考电流，可以实现在CMOS工艺。系统的性能进行了研究的范围内的电源电压和温度。CMOS电流基准对电源电压和温度的依赖性通过简单地减去两个对电源电压和温度具有相同依赖性的电流输出来补偿。采用浮栅MOSFET提高了系统性能。工作包括所提出的电流基准电路的数学建模和使用TANNAR EDA工具仿真验证。并对所设计的电路进行了版图设计。该电路在温度和电源电压下的性能优于该领域的现有工作。基准电流源的电源和温度依赖性分别为520 ppm/V和312 ppm/oC。基准电流源可以工作到0.9V电源。
In this paper we propose a scheme for generating a reference current which can be implemented in the CMOS technology. The system performance is investigated for a range of supply voltages and temperature. The dependency of CMOS Current reference on supply voltage and temperature is compensated by simply subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is improved by the use of Floating Gate MOSFET. The work includes the mathematical modeling of the proposed current reference circuit and its verification by simulation using TANNAR EDA tools. The layout of the proposed circuit is also prepared. The circuit performance over temperature and supply voltage is better than the prior works in this area. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The current reference can operate down to 0.9V supply.