Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy
Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy
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DOI：
10.7567/jjap.55.05fa01
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发表时间：
2016-05
影响因子：
1.5
通讯作者：
Takahide Hirasaki;Tomoyasu Hasegawa;M. Meguro;Q. Thieu;H. Murakami;Y. Kumagai;B. Monemar;A. Koukitu
中科院分区：
文献类型：
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作者：
Takahide Hirasaki;Tomoyasu Hasegawa;M. Meguro;Q. Thieu;H. Murakami;Y. Kumagai;B. Monemar;A. Koukitu
研究了NH3输入分压对三卤化物气相外延生长N极性InGaN的影响。研究发现，NH3输入分压会影响表面形貌、固体成分和光学性质。热力学分析表明，由于 NH3 输入分压增加导致 InN 沉积驱动力增加，因此铟含量增加。此外，光致发光测量中 2.1 eV 左右的深能级发射在较高的 NH3 输入分压下急剧下降。从头计算和随后的二次离子质谱测量表明 InGaN 层中金属空位和/或碳杂质掺入的减少。
The influence of NH3 input partial pressure on N-polarity InGaN grown by tri-halide vapor phase epitaxy was investigated. It was found that surface morphology, solid composition and optical properties were affected by NH3 input partial pressure. As shown in thermodynamic analyses, the indium content increased due to an increase in the driving force for InN deposition caused by increased NH3 input partial pressure. In addition, the deep level emission around 2.1 eV in photoluminescence measurements drastically decreased at higher NH3 input partial pressures. Ab initio calculations and subsequent secondary ion mass spectrometry measurements suggested the reduction of metal-vacancies and/or carbon impurity incorporation in the InGaN layers.