Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces
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DOI：
10.1063/1.1485309
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发表时间：
2002-06-17
影响因子：
4
通讯作者：
Nakasaki, R
中科院分区：
文献类型：
--
作者：
Hashizume, T;Nakasaki, R
对等离子体暴露的n-GaN表面的缺陷相关的表面态进行了详细的研究。暴露于H-2等离子体的样品的金属-绝缘体-半导体电容-电压特性中出现异常平坦部分，对应于表面态密度分布中E-C-0.5 eV处的局部峰。原子力显微镜和X射线光电子能谱的研究表明，在H-2等离子体处理的GaN表面上形成的Ga液滴，所造成的NHX形式的氮原子的解吸。这些结果表明，在H-2等离子体处理的GaN表面上引入了导带边缘附近的氮空位相关态。没有这样的效果发生在N-2-等离子体处理的GaN表面上。(C)2002年美国物理学会。
Detailed studies on the defect-related surface states of plasma-exposed n-GaN surfaces were carried out. An anomalous flat portion appeared in the metal-insulator-semiconductor capacitance-voltage characteristics for the sample exposed to H-2 plasma, corresponding to a localized peak at E-C-0.5 eV in the surface state density distribution. Atomic-force microscope and x-ray photoemission studies revealed the formation of Ga droplets on H-2-plasma-treated GaN surfaces, caused by the desorption of nitrogen atoms in the form of NHx. These results suggested that a nitrogen-vacancy-related state near the conduction-band edge was introduced on the H-2-plasma-treated GaN surface. No such effects took place on the N-2-plasma-treated GaN surfaces. (C) 2002 American Institute of Physics.