A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology
A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology
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DOI：
10.1016/s0168-9002(00)00893-7
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发表时间：
2001-02-11
影响因子：
1.4
通讯作者：
Winter, M
中科院分区：
文献类型：
--
作者：
Turchetta, R;Berst, JD;Winter, M
提出了一种采用标准CMOS工艺制造的用于带电粒子跟踪的新型单片有源像素传感器（MAPS）。该传感器是一个光电二极管，这是很容易在CMOS技术。该二极管具有特殊的结构，可实现跟踪应用所需的高检测效率。部分耗尽的薄外延硅层被用作灵敏的检测器体积。使用基于ToSCA或3-D ISE-TCAD软件包的半导体器件模拟表明，电荷收集是有效的：相当快（100 ns的量级），并且电荷扩散仅限于几个像素。第一个原型已经设计，制造和测试。它由四个阵列组成，每个阵列包含64 × 64像素，在两个方向上的读出间距为20 μ m。该器件是使用标准的亚微米0.6妈妈CMOS工艺，其特点是双槽注入在一个p型外延层，一个共同的特点，许多现代CMOS VLSI工艺。用软X射线源（Fe-55）和最小电离粒子（15 GeV/c π介子）进行的广泛测试充分证明了预测的性能，单个像素噪声（ENC）低于20个电子，信噪比为5.9 keV X射线和最小电离粒子（MIP）的数量级为30。这种新型设备为粒子物理实验中的高精度顶点探测器以及其他应用开辟了新的前景，如低能β粒子成像，可见光单光子成像（使用混合光子探测器方法）和高精度慢中子成像。(C)2001 Elsevier Science B. V.保留所有权利。
A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed. The sensor is a photodiode, which is readily available in a CMOS technology. The diode has a special structure, which allows the high detection efficiency required for tracking applications. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. Semiconductor device simulation, using either ToSCA based or 3-D ISE-TCAD software packages shows that the charge collection is efficient: reasonably fast (order of 100 ns), and the charge spreading limited to a few pixels only. A first prototype has been designed, fabricated and tested. It is made of four arrays each containing 64 x 64 pixels, with a readout pitch of 20 mum in both directions. The device is fabricated using standard submicron 0.6 mum CMOS process, which features twin-tub implanted in a p-type epitaxial layer, a characteristic common to many modern CMOS VLSI processes. Extensive tests made with soft X-ray source (Fe-55) and minimum ionising particles (15 GeV/c pions) fully demonstrate the predicted performances, with the individual pixel noise (ENC) below 20 electrons and the Signal-to-Noise ratio for both 5.9 keV X-rays and Minimum Ionising Particles (MIP) of the order of 30. This novel device opens new perspectives in high-precision vertex detectors in Particle Physics experiments, as well as in other application,like low-energy beta particle imaging, visible light single photon imaging (using the Hybrid Photon Detector approach) and high-precision slow neutron imaging. (C) 2001 Elsevier Science B.V. All rights reserved.