On the assessment of local stress distributions in integrated circuits
On the assessment of local stress distributions in integrated circuits
复制标题
集成电路局部应力分布的评估
DOI：
10.1016/0169-4332(93)90075-m
复制
发表时间：
1993
影响因子：
6.7
通讯作者：
A. Armigliato
中科院分区：
文献类型：
--
作者：
J. Vanhellemont;I. Wolf;K. Janssens;S. Frabboni;R. Balboni;A. Armigliato
讨论并说明了微拉曼光谱 (μRS)、会聚束电子衍射 (CBED) 和电子衍射衬度成像 (EDCI) 用于研究半导体衬底局部应力场的可能性和局限性，并通过硅局部隔离结构获得的结果进行说明。 μRS 的优点是非破坏性，但其空间分辨率受到激光波长的限制，通常为 1 μm 量级。其他缺点是硅基板中的应力只能通过透明层测量，并且记录的拉曼位移是由于不同应力分量引起的位移的卷积。这两种透射电子显微镜技术具有更高的空间分辨率（纳米级），但缺点是它们具有破坏性并且需要复杂的样品制备。此外，适合 TEM 检查的薄箔的制备会导致垂直于图像平面的方向上的应变松弛，在解释结果时必须考虑到这一点。然而，通过这三种技术的组合使用，可以推断出有关应变分布的有用的补充信息。这为微电子器件的局部应力与电性能之间的相关性开辟了有趣的视角。
The possibilities and limitations of micro Raman spectroscopy (μRS), convergent beam electron diffraction (CBED) and electron diffraction contrast imaging (EDCI) for the study of localised stress fields in semiconductor substrates are discussed and illustrated with results obtained on local isolation structures in silicon. μRS has the advantage of being non-destructive but has a spatial resolution which is limited by the wavelength of the laser and which is typically of the order of 1 μm. Other drawbacks are that stresses in the silicon substrate can only be measured through transparent layers and that the recorded Raman shift is a convolution of shifts due to different stress components. The two transmission electron microscopy techniques have a much higher spatial resolution (nm scale) but suffer from the drawback that they are destructive and require elaborated specimen preparation. Furthermore, the preparation of the thin foils suitable for TEM inspection leads to relaxation of the strains in the direction perpendicular to the image plane which has to be taken into account for the interpretation of the results. Nevertheless, useful, complementary information on the strain distributions can be deduced from the combined use of these three techniques. This opens interesting perspectives in the correlation between local stress and electrical properties of microelectronic devices.