Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air‐bridged lateral epitaxial growth
Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air‐bridged lateral epitaxial growth
复制标题
DOI：
10.1002/pssb.200405073
复制
发表时间：
2004-10
期刊：
影响因子：
--
通讯作者：
A. Ishibashi;Y. Kawaguchi;G. Sugahara;T. Shimamoto;T. Yokogawa;Y. Yamada;Y. Ueki;Kohzo Nakamura;T. Taguchi
中科院分区：
文献类型：
--
作者：
A. Ishibashi;Y. Kawaguchi;G. Sugahara;T. Shimamoto;T. Yokogawa;Y. Yamada;Y. Ueki;Kohzo Nakamura;T. Taguchi
利用空间分辨阴极发光显微镜（CL）研究了空气桥横向外延生长（ABLEG）GaN籽晶层上AlGaN层的结构特性。ABLEG-AlGaN层的横截面空间分辨CL图像显示，大致有三个区域具有不同的CL主峰。该结果表明，大致存在三个具有不同Al含量的区域。在过度生长的AlGaN翼合并之前，存在两个Al含量区域，例如约6.5%、10.6%。另一方面，在翼的合并之后，AlGaN层的Al含量变得均匀（Al含量= 8.9%）。这些结果表明，过度生长的AlGaN翼的小面生长导致ABLEG-AlGaN层中Al含量的调制。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Structural properties of AlGaN layer on the GaN seed layer fabricated by air‐bridged lateral epitaxial growth (ABLEG) have been studied by spatially resolved cathodoluminescence (CL) microscopy. The cross‐sectional spatially resolved CL images of the ABLEG‐AlGaN layer reveal that there are roughly three regions which have different main CL peaks. This result suggests that there are roughly three regions with the different Al contents. Before coalescence of the overgrown AlGaN wings, there are two regions of Al content, such as about 6.5, 10.6%. On the other hand, after coalescence of the wings, the Al content of the AlGaN layer becomes uniform (Al content = 8.9%). These results suggest that the facet growth of the overgrown AlGaN wings causes the modulation of Al content in the ABLEG‐AlGaN layer. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)