Defects and acceptor centers in ZnO introduced by C+-implantation
Defects and acceptor centers in ZnO introduced by C+-implantation
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DOI：
10.1007/s10853-013-7886-4
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发表时间：
2014-03
影响因子：
4.5
通讯作者：
M. Jiang;X. Xue;Z. Q. Chen;Y. D. Liu;H. Liang;H. Zhang;A. Kawasuso
中科院分区：
文献类型：
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作者：
M. Jiang;X. Xue;Z. Q. Chen;Y. D. Liu;H. Liang;H. Zhang;A. Kawasuso
用280keV的C+离子注入氧化锌单晶，注入剂量为6×1016 cm−~2。正电子湮没测量表明注入样品中有大量的空位团簇。X射线衍射、光致发光和拉曼散射测试都表明注入引入了严重的损伤，在500℃以上热处理后，损伤的晶格部分恢复。从室温光致发光测量可以看出，注入样品在1100℃退火后，在3.235 eV左右出现一个额外的峰，这个峰比自由激子强得多。从低温光致发光光谱分析，该峰主要是自由电子-受主(e，A0)谱线，可能与CO有关。
ZnO single crystals were implanted with 280 keV C+to a dose of 6 × 1016cm−2. Positron annihilation measurements reveal a large number of vacancy clusters in the implanted sample. They further agglomerate into larger size or even microvoids after annealing up to 700 °C, and are fully removed at 1200 °C. X-ray diffraction, photoluminescence, and Raman scattering measurements all indicate severe damage introduced by implantation, and the damaged lattice is partially recovered after annealing above 500 °C. From room temperature photoluminescence measurements, an additional peak at around 3.235 eV appears in the implanted sample after annealing at 1100 °C, which is much stronger than that of the free exciton. From the analysis of low temperature photoluminescence spectra, this peak is mostly a free electron to acceptor (e,A0) line which is probably associated with CO.